This paper presents an integrated True Random Number Generator (TRNG) based on the random switching behavior of Magnetic Tunnel Junctions (MTJs) under low write current. A complete TRNG is designed with minimal overhead to an existing embedded MRAM in 28nm CMOS. To the best of our knowledge, this is the first experimental study of this random process and the first TRNG implemented with commercial STT-MRAM technology. The prototype adds only 180$μ$m2to a standard MRAM array for TRNG operation. It passes all NIST randomness tests across -25 to 100°C, while consuming 18pJ/bit with 66Mbps throughput at the nominal condition.